10 Gb/s broadband silicon electro-optic absorption modulator
نویسندگان
چکیده
Article history: Received 9 December 2009 Received in revised form 22 March 2010 Accepted 22 March 2010 Here we propose a design for a novel broadband silicon electro-optic absorption modulator. The device is simply a 100 μm long silicon waveguide with a Schottky diode integrated in it. Modulation is achieved through free-carrier absorption, not interference effects, enabling operation over the entire bandwidth of the waveguide. The high overlap between the modulated carrier density and the optical mode enables high speed (N10 Gb/s), small footprint and modulation depths of ∼4.6 dB. © 2010 Elsevier B.V. All rights reserved.
منابع مشابه
Broadband Silicon Electro-Optic Absorption Modulator
Here we propose a design for a broadband electro-optic absorption modulator. The device is simply a 50μm long silicon waveguide with integrated Schottky diodes. It achieves 64% modulation depth up to at least 10 Gb/s. 2008 Optical Society of America OCIS codes: (130.3120) Integrated optics devices; (230.2090) Electro-optical devices; (230.4110) Modulators
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